Memory PHY IP
High-Performance Memory PHY IP
Context: Advanced memory PHY IP development across HBM, GDDR, and LPDDR standards.
Role: Physical implementation and timing signoff partner across six critical testchips.
Scope: 14nm, 12nm, and 7nm implementation; GDDR6, LPDDR5/4/4x, and HBM3 PHY validation.
Outcome: Supported silicon-proven memory PHY development across multiple standards, nodes, and testchip programs.